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ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100uA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Emitter cut-off current
ICEO
VCE=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC=100mA
85
400
DC current gain
hFE(2)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB=80mA
1.2
V
Base-emitter voltage
VBE
VCE=1V, IC=10mA
1
V
Transition frequency
fT
VCE=10V, IC=50mA,f=30MHZ
100
MHz
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100uA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Emitter cut-off current
ICEO
VCE=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC=100mA
85
400
DC current gain
hFE(2)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB=80mA
1.2
V
Base-emitter voltage
VBE
VCE=1V, IC=10mA
1
V
Transition frequency
fT
VCE=10V, IC=50mA,f=30MHZ
100
MHz