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ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
DC current gain
hFE
VCE=-3V,IC=-100mA
82
390
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
-0.2
-0.5
V
Transition frequency
fT
VCE=-5V,IC=-50mA,f=30MHz
150
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
20
30
pF
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-50μA,IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20V,IE=0
-0.5
μA
Emitter cut-off current
IEBO
VEB=-4V,IC=0
-0.5
μA
DC current gain
hFE
VCE=-3V,IC=-100mA
82
390
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA,IB=-50mA
-0.2
-0.5
V
Transition frequency
fT
VCE=-5V,IC=-50mA,f=30MHz
150
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
20
30
pF